BFY450 HiRel NPN Silicon RF Transistor * HiRel Discrete and Microwave Semiconductor * For Medium Power Amplifiers * Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz * Hermetically sealed microwave package * Transitor frequency fT = 20 GHz * SIEGET 25 GHz fT - Line Infineon Technologies Grounded Emitter Transistor25 GHz fT- Line * esa Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFY450 (ql) - Pin Configuration 1=C 2=E 3=B 4=E - Package - MICRO-X (ql) Testing level: P: Professional testing H: High Rel quality S: Space quality ES: ESA qualified Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 100 Base current IB 10 Total power dissipation Ptot 450 mW Junction temperature Tj 175 C Operating temperature range Top -65 ... 175 C Storage temperature Tstg -65 ... 175 C V mA TS 110 C 1)2) 1T s is measured on the collector lead at the soldering point to the pcb. 2At T = 110C. For T > 110C derating is required. S S 2007-08-17 1 BFY450 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS < 145 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol min. typ. max. ICEX - - 200 A ICBO - - 100 nA IEBO - - 50 A hFE 50 90 150 - DC Characteristics Collector-emitter cutoff current2) VCE = 4.5 V, IB = 1 A Collector -base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 1 V 1T s is measured on the collector lead at the soldering point to the pcb. test assures V(BR)CE0 > 4.5 V 2This 2007-08-17 2 BFY450 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics (verified by random sampling) Transition frequency GHz fT IC = 90 mA, VCE = 3 V, f = 1 GHz 18 22 - IC = 90 mA, VCE = 3 V, f = 2 GHz - 17 - Ccb - 0.42 0.9 Collector emitter capacitance Cce - 1.27 2.6 VCE = 2 V, VBE = vbe = 0 , f = 1 MHz Emitter-base capacitance Ceb - 2 3 F - 1.25 2 Gma1) - 16 - |S21e|2 8 12 - dB P-1dB - 19 - dBm Collector-base capacitance pF VCB = 2 V, VBE = vbe = 0 , f = 1 MHz VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz Noise figure dB IC = 10 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Transducer gain IC = 50 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz 1dB Compression point IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz 1/2 ma = |S21e / S12e | (k-(k-1) ) 1G 2007-08-17 3 BFY450 Micro-X Package 1.05 0.25 1.02 0.1 0.76 3 o1.65 0.1 1 XY 4.2 -0.2 0.5 0.1 2 4 1.78 0.1 +0.05 -0.03 GXM05552 2007-08-17 4 BFY450 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-08-17 5